characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 11.5a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) 050-7009 rev c 3-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 1000 23 0.450 100500 100 35 apt10045 (g) 1000 2392 3040 565 4.52 -55 to 150 300 2350 2500 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2ll lll apt10045b2ll (g) apt10045lll (g) 1000v 23a 0.450 ? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
050-7009 rev c 3-2003 dynamic characteristics apt10045b2ll - lll(g) characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 23a ) reverse recovery time (i s = -i d 23a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 23a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 2392 1.3 560 5.50 10 symbol r jc r ja min typ max 0.22 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 23a @ 25c resistive switching v gs = 15v v dd = 500v i d = 23a @ 25c r g = 1.6 inductive switching @ 25c v dd = 670v, v gs = 15v i d = 23a, r g = 5 inductive switching @ 125c v dd = 670v v gs = 15v i d = 23a, r g = 5 min typ max 4350 715120 154 2697 10 5 30 8 639380 1046 451 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 9.45mh, r g = 25 , peak i l = 23a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 28a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.250.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7009 rev c 3-2003 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 8070 60 50 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 6050 40 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 5.5v 6v 6.5v 7v 5v v gs =15 & 8v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature typical performance curves apt10045b2ll - lll (g) normalized to v gs = 10v @ 11.5a i d = 11.5a v gs = 10v 0.08930.0842 0.0485 0.0102f0.106f 0.979f power (watts) junction temp. ( c) rc model case temperature downloaded from: http:///
v ds =500v v ds =200v v ds =800v i d = 23a c rss c iss c oss 050-7009 rev c 3-2003 apt10045b2ll - lll (g) v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 20,00010,000 1,000 100 10 200100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5 9250 10 1 1612 84 0 t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 670v r g = 5 t j = 125c l = 100h t d(on) t d(off) e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 0 10 20 30 40 0 10 20 30 40 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 160140 120 100 8060 40 20 0 20001500 1000 500 0 6050 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 v dd = 670v r g = 5 t j = 125c l = 100h v dd = 670v i d = 23a t j = 125c l = 100h e on includes diode reverse recovery. typical performance curves e on e off v dd = 670v r g = 5 t j = 125c l = 100h e on includes diode reverse recovery. downloaded from: http:///
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apt10045b2ll - lll (g) 90% t d(off) t j = 125 c drain current drain voltage gate voltage 10% 0 90% t f switching energy 10 % t d(on) 90% 5 % t r 10 % 5 % switching energy gate voltage t j = 125 c drain current drain voltage figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df120b v ce figure 20, inductive switching test circuit g v dd 050-7009 rev c 3-2003 e1 sac: tin, silver, copper e1 sac: tin, silver, copper downloaded from: http:///
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